mosfet-全盛棋牌69cc官网版

济南晶恒 1997—
中国半导体分立器件研发制造基地

标题

vds(v)

id(a)

pd(w)

vgs(max)(v)

rds(on)(typ)(ω)@10v

qg(typ)(nc)@10v

ciss(typ)(pf)

outline

d25n10n 100 30 88 ±20 0.030 61 3540
mosfet
sj11n60 600 11 151 ±30 0.38 32 720 to-220
sj11n60f 600 11 35 ±30 0.38 32 720 ito-220
sj11n60d 600 11 151 ±30 0.38 32 720 to-263
sj11n70 700 11 151 ±30 0.45 to-220
sj21n60 600 21 151 ±30 0.13 46 2328 to-220
sj21n60f 600 21 34 ±30 0.13 46 2328 ito-220
sj21n60d 600 21 151 ±30 0.13 46 2328 to-263
sj21n60e 600 21 151 ±30 0.13 46 2328 to-262
sj21n60n 600 21 151 ±30 0.13 46 2328 to-251
sj21n60m 600 21 151 ±30 0.13 46 2328 to-252
sj5n65 650 5 151 ±30 0.85 7 298 to-220ab
sj5n65f 650 5 35 ±30 0.85 7 298 ito-220ab
sj5n65d 650 5 151 ±30 0.85 7 298 to-263
sj5n65n 650 5 151 ±30 0.85 7 298 to-251
sj5n65m 650 5 151 ±30 0.85 7 298 to-252
sj7n65 650 7 151 ±30 0.60 10.3 400 to-220
sj7n65f 650 7 35 ±30 0.60 10.3 400 ito-220
sj7n65e 650 7 151 ±30 0.60 10.3 400 to-262

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