super junction mosfet-全盛棋牌69cc官网版

济南晶恒 1997—
中国半导体分立器件研发制造基地

标题

configuration

ch

vds(v)

id(a)

pd(w)

vgs(max)(v)

vth(min)(v)

vth(max)(v)

rds(on)(typ)(ω)@10v

qg(typ)(nc)@10v

ciss(typ)(pf)

outline

sj11n60 single n 600 11 151 ±30 2.5 4.5 0.38 32 720 to-220
sj11n60f single n 600 11 35 ±30 2.5 4.5 0.38 32 720 ito-220
sj11n60d single n 600 11 151 ±30 2.5 4.5 0.38 32 720 to-263
sj11n70 single n 700 11 151 ±30 2.0 4.0 0.45 to-220
sj21n60 single n 600 21 151 ±30 2.5 4.0 0.13 46 2328 to-220
sj21n60f single n 600 21 34 ±30 2.5 4.0 0.13 46 2328 ito-220
sj21n60d single n 600 21 151 ±30 2.5 4.0 0.13 46 2328 to-263
sj21n60e single n 600 21 151 ±30 2.5 4.0 0.13 46 2328 to-262
sj21n60n single n 600 21 151 ±30 2.5 4.0 0.13 46 2328 to-251
sj21n60m single n 600 21 151 ±30 2.5 4.0 0.13 46 2328 to-252
sj5n65 single n 650 5 151 ±30 2.5 4.5 0.85 7 298 to-220ab
sj5n65f single n 650 5 35 ±30 2.5 4.5 0.85 7 298 ito-220ab
sj5n65d single n 650 5 151 ±30 2.5 4.5 0.85 7 298 to-263
sj5n65n single n 650 5 151 ±30 2.5 4.5 0.85 7 298 to-251
sj5n65m single n 650 5 151 ±30 2.5 4.5 0.85 7 298 to-252
sj7n65 single n 650 7 151 ±30 2.5 4.5 0.60 10.3 400 to-220
sj7n65f single n 650 7 35 ±30 2.5 4.5 0.60 10.3 400 ito-220
sj7n65e single n 650 7 151 ±30 2.5 4.5 0.60 10.3 400 to-262
sj7n65d single n 650 7 151 ±30 2.5 4.5 0.60 10.3 400 to-263
sj7n65n single n 650 7 151 ±30 2.5 4.5 0.60 10.3 400 to-251

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